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New England Photoconductor

Extended InGaAs RT & TE Cooled

Thermoelectrically Cooled Extended InGaAs Photodiodes

Room Temperature
Part Number IE6-.5 IE6-1 E6-2
Active Area Diameter um 500 1000 2000
Responsivity @ 2300nm A/W Min/Typ 0.9/1.3 0.9/1.3 0.9/1.3
Dark Current @ .5V uA Typ/Max 5/50 15/75 75/100
Capacitance @ 0V pF 60 200 800
Shunt Resistance @ 10mV Kohms 15 3 1
D*(cm.Hz1/2 /W) 5x1010 5x1010 5x1010
NEP (W/Hz1/2) 1x10-12 2x10-12 5x10-12
Spectral Range Microns 1.2-2.6 1.2-2.6 1.2-2.6
Cut-Off Frequency @0V -3dB(MHz) 50 15 5
Test Temperature °C 25 25 25
Storage Temperature °C -40 to 125 -40 to 125 -40 to 125
Package Options *(Note) 4-5 4-5 4-5

Thermoelectrically Cooled 1 Stage
Part Number IE6C1-.5 IE6C1-1 IE6C1-2
Active Area Diameter um 500 1000 2000
Responsivity @ 2300nm A/W Min/Typ 0.9/1.3 0.9/1.3 0.9/1.3
Dark Current @ 0.5V nA Max/Typ .5/4 1.5/7.5 7.5/40
Capacitance @ 0V pF 60 200 800
Shunt Resistance @ 10mV Kohms 15 3 1
D*(cm.Hz1/2 /W) 1x1011 1x1011 1x1011
NEP (W/Hz1/2) 4x10-13 7x10-13 1x10-12
Spectral Range Microns 1.2-2.57 1.2-2.57 1.2-2.57
Cut-Off Frequency @0V -3dB(MHz) 50 15 5
Test Temperature °C -10 -10 -10
Storage Temperature °C -40 to 125 -40 to 125 -40 to 125
Package Options *(Note) 5-7-6-8 5-7-6-8 5-7-6-8

Thermoelectrically Cooled 2 Stage
Part Number IE6C2-.5 IE6C2-1 IE6C2-2
Active Area Diameter um 500 1000 2000
Responsivity @ 2300nm A/W Min/Typ 0.9/1.3 0.9/1.3 0.9/1.3
Dark Current @ 0.5V nA Max/Typ .2/.5 .8/4 4/50
Capacitance @ 0V pF 60 200 800
Shunt Resistance @ 10mV Kohms 400 60 20
D*(cm.Hz1/2 /W) 2x1011 2x1011 2x1011
NEP (W/Hz1/2) 3x10-13 5x10-13 9x10-13
Spectral Range Microns 1.2-2.55 1.2-2.55 1.2-2.55
Cut-Off Frequency @0V -3dB(MHz) 50 15 5
Test Temperature °C -20 -20 -20
Storage Temperature °C -40 to 125 -40 to 125 -40 to 125
Package Options *(Note) 5-7-6-8 5-7-6-8 5-7-6-8

NOTE:    * 4 = TO46 Package, 5 = TO5 Package, 7 = TO37 Package 8 = TO8 Package
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InGGaAs
InGGaAs